| 申请日期 | 2025-06-29 | 申请号 | US12206324 |
| 公开（公告）号 | US8058122B2 | 公开（公告）日 | 2011-11-15 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Hiroaki Niimi; Manuel Angel Quevedo Lopez | ||
| 简介 | Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors. | ||
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