| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method capable of suppressing occurrence of particles at the time of manufacturing a semiconductor device containing a barrier metal layer, and to provide a manufacturing apparatus for a semiconductor device which employs the manufacturing method.
SOLUTION : In manufacturing a semiconductor device including a barrier metal layer in which a metal compound layer is sandwiched between two metal layers, a first metal layer which is to be a bottom layer is applied with oxidation treatment during a process in which a target consisting of one metal element out of titanium and tantalum is sputtered in the atmosphere of rare gas so that a plurality of metal layers are stacked on a background wiring. Then, after a first metal oxide layer is formed on the surface of the first metal layer which is to be the bottom layer, the surface of base material containing at least one metal layer is subjected to any one of oxidation treatment, nitriding treatment, and oxynitriding treatment so that respective layers have a different element configuration. Through this treatment, a second metal compound layer is formed. The metal compound layer may be a metal nitride layer or metal oxynitride layer as well as a metal oxide layer.
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