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Semiconductive materials and associated uses thereof 发明授权

2023-01-26 4300 1335K 0

专利信息

申请日期 2025-06-28 申请号 US12202026
公开(公告)号 US8049178B2 公开(公告)日 2011-11-01
公开国别 US 申请人省市代码 全国
申请人 Kelvin Lynn; Kelly Jones; Guido Ciampi
简介 High rate radiation detectors are disclosed herein. The detectors include a detector material disposed inside the container, the detector material containing cadmium, tellurium, and zinc, a first dopant containing at least one of aluminum, chlorine, and indium, and a second dopant containing a rare earth metal. The first dopant has a concentration of about 500 to about 20, 000 atomic parts per billion, and the second dopant has a concentration of about 200 to about 20, 000 atomic parts per billion.


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