| 简介 |
PROBLEM TO BE SOLVED : To provide a film deposition method capable of reducing a resistivity of a tungsten film deposited by using a sputtering method and to provide a tungsten target used for the film deposition method.
SOLUTION : In the film deposition method for depositing a tungsten film on a substrate S by sputtering a target T containing tungsten by using a rare gas, the film deposited tungsten film contains a nickel oxide by using the target T containing nickel. The film deposited tungsten film has 0.001 to 1 mass% nickel concentration.
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