| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a GaN-based semiconductor epitaxial substrate, in which a warp-free crystalline GaN-based semiconductor is epitaxially grown.
SOLUTION : A low-temperature protective layer 12 consisting of AlN is grown on a rare earth perovskite substrate 11 and a first AlGaN-based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al satisfies 0.40≤x1≤0.45 is grown on the low-temperature protective layer 12. Then, a growth layer following a second AlGaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al satisfies 0≤x2≤0.45 is laminated on the first AlGaN-based semiconductor layer, thereby forming composition gradient layers 13 and 14.
COPYRIGHT : (C)2012, JPO&INPIT |
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