| 申请日期 | 2025-06-25 | 申请号 | WOJP11002321 |
| 公开（公告）号 | WO2011132418A1 | 公开（公告）日 | 2011-10-27 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | IDEMITSU KOSAN CO LTD; NISHIMURA Mami; TOMAI Shigekazu; YANO Koki; KASAMI Masashi; ITOSE Masayuki; MATSUZAKI Shigeo; EBATA Kazuaki | ||
| 简介 | In the disclosed deposition method, a target comprising a metal oxide is sputtered and a thin film is deposited on a substrate in a gaseous environment containing rare gas atoms and water molecules, wherein the content of the aforementioned water molecules is 0.1-10% of the aforementioned rare gas atoms by partial pressure ratio. | ||
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