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METHOD FOR MANUFACTURING SPUTTERING TARGET 发明申请

2023-12-07 3150 632K 0

专利信息

申请日期 2025-08-16 申请号 JP2010073958
公开(公告)号 JP2011208168A 公开(公告)日 2011-10-20
公开国别 JP 申请人省市代码 全国
申请人 MITSUBISHI MATERIALS CORP
简介 PROBLEM TO BE SOLVED : To provide a method for manufacturing a sputtering target for forming a film containing Co, Ta and a rare-earth metal, which can enhance the density of the target to such a level that the target is hardly cracked and can be machined. SOLUTION : This manufacturing method includes the steps of : preparing a mixture powder of an R-Co alloy powder which is an alloy powder of Co and R that is a rare-earth metal and a Ta powder so that the composition of the target comprises 5-10 atom% R, 5-10 atom% Ta and the balance Co with unavoidable impurities by a ratio; and hot-pressing the mixture powder in a vacuum or an inert-gas atmosphere. COPYRIGHT : (C)2012, JPO&INPIT


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