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METHOD FOR FORMING FILM WITH SPUTTERING PROCESS 发明申请

2023-09-01 3750 115K 0

专利信息

申请日期 2025-06-25 申请号 JP2010074977
公开(公告)号 JP2011208189A 公开(公告)日 2011-10-20
公开国别 JP 申请人省市代码 全国
申请人 UNIV TOHOKU; SUMITOMO OSAKA CEMENT CO LTD
简介 PROBLEM TO BE SOLVED : To provide a method for forming a film with a sputtering process, which can further improve the crystallinity of an LaB6 film, and also does not cause the peeling of the LaB6 film. SOLUTION : The LaB6 film having superior crystallinity can be obtained by an operation of sputtering an LaB6 target in such an atmosphere that 0.01-5 vol.% of nitrogen gas is added to argon, when the LaB6 film is formed on a substrate formed from tungsten or molybdenum and a material containing an oxide of a rare-earth element, with the sputtering process. COPYRIGHT : (C)2012, JPO&INPIT


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