| 简介 |
PROBLEM TO BE SOLVED : To provide a thin-film transistor excellent in mass productivity, and to provide a semiconductor thin film useful for manufacturing a semiconductor device.
SOLUTION : A semiconductor film containing a rare gas element with 1×1020/cm3 to 1×1021/cm3 formed by a plasma CVD method is formed and a part of the semiconductor film is removed to form an active layer, and accordingly, a top gate type thin-film transistor or a bottom gate type thin-film transistor is formed. Furthermore, a semiconductor device using the semiconductor film containing a rare gas element of 1×1020/cm3 to 1×1021/cm3 manufactured by the plasma CVD method as a peel-off layer is manufactured. Furthermore, a semiconductor device using the semiconductor film containing the rare gas element of 1×1020/cm3 to 1×1021/cm3 manufactured by the plasma CVD method as a gettering site is manufactured.
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