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NITRIDE SINGLE CRYSTAL AND PRODUCING METHOD THEREOF 发明授权

2023-02-14 3900 332K 0

专利信息

申请日期 2025-08-04 申请号 KR1020040052577
公开(公告)号 KR101077323B1 公开(公告)日 2011-10-20
公开国别 KR 申请人省市代码 全国
申请人 SUMITOMO ELECTRIC INDUSTRIES LTD
简介 The present invention refers to, nitride crystal (11) compound of a rare earth element containing material transporting medium layer (12) is formed, a seed crystal (13) for said material transporting medium layer (12) by contacting, said a seed crystal (13) to nitride single crystal (14) including a thus growing a nitride single crystal is of manufacturing method. And, in its turn, material transporting medium layer (12) as, aluminum compound, alkaline earth compound and transition metal compound selected from the group consisting of 1 or several compounds with nitride single crystal containing compounds of the rare earth element is of manufacturing method. By such manufacturing method, or a large crystal diameter is 10 nanometer nitride single crystal, which is can be obtained is automatically installed on the tire.


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