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ORIENTED PEROVSKITE OXIDE THIN FILM 发明申请

2023-02-05 3800 533K 0

专利信息

申请日期 2025-07-22 申请号 WOJP11059106
公开(公告)号 WO2011129341A1 公开(公告)日 2011-10-20
公开国别 WO 申请人省市代码 全国
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; NAKAJIMA Tomohiko; TSUCHIYA Tetsuo; MANABE Takaaki
简介 A thin film which comprises an organic metal salt or an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by formula A(Bn-1MnO3n+1) (wherein n represents a natural number of 2 or more; A represents at least one monovalent cation selected from Na, K, Rb and Cs; B comprises at least one component selected from a trivalent rare earth ion, Bi, a bivalent alkali earth metal ion and a monovalent alkali metal ion; and M comprises at least one component selected from Nb and Ta; wherein Ti and Zr may be dissolved to form a solid solution) on a non-oriented substrate. The resulting product is maintained at a temperature ranging from room temperature to 600˚C, and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that the thin film can be oriented on the substrate in the (001) direction.


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