| 简介 |
PROBLEM TO BE SOLVED : To adjust a threshold voltage of a thin film transistor by incorporating a rare gas element in a semiconductor film of a concentration more than specified.
SOLUTION : The thin film transistor is manufactured through the steps of : introducing a semiconductor material gas into a treatment chamber; forming a semiconductor film in the treatment chamber over a gate insulating layer provided covering a gate electrode; evacuating the semiconductor material gas in the treatment chamber; introducing the rare gas into the treatment chamber; performing plasma treatment on the semiconductor film in the treatment chamber; forming an impurity semiconductor film over the semiconductor film; processing the semiconductor film and the impurity semiconductor film into island shapes, so that a semiconductor stack is formed; forming source and drain electrodes in contact with an impurity semiconductor layer included in the semiconductor stack. The formation of the semiconductor film and the rare gas plasma treatment are carried out preferably without changing the pressure and the temperature in the treatment chamber, and only gas kinds in the treatment chamber are made different. Argon is preferable as rare gas, and rare gas element is preferably contained equal to or more than 2.5 × 1018 cm-3 in the semiconductor film.
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