| 简介 |
Treatment gas containing nitrogen gas and rare gas is introduced into a treatment container (1) of a plasma nitriding treatment device (100) such that the flow amount is within a range of 1.5(mL/min)/L-13(mL/min)/L, with the flow amount being the total flow amount of treatment gas per 1L volume of the treatment container [mL/min(sccm)]. Nitrogen-containing plasma is generated inside the treatment container (1), and nitriding treatment is continually implemented whilst a wafer (W) is exchanged. It is preferable that the volume flow rate ratio of the nitrogen gas and the rare gas (nitrogen gas/rare gas) is in the range of 0.05-0.8. |
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