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THICK OXIDE FILM BY SINGLE COATING 发明申请

2023-09-07 3090 1336K 0

专利信息

申请日期 2026-03-07 申请号 WOUS11026779
公开(公告)号 WO2011126629A1 公开(公告)日 2011-10-13
公开国别 WO 申请人省市代码 全国
申请人 AMERICAN SUPERCONDUCTOR CORPORATION; SATHYAMURTHY Srivatsan; RUPICH Martin W
简介 An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 μm μand up to 5 μm. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 μm and up to 5 μm. Further, methods of making these two articles are described.


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