| 简介 |
PROBLEM TO BE SOLVED : To provide an electronic element that uses a rare earth iron oxide, and to provide a method of manufacturing the same.
SOLUTION : The electronic element has a PN junction formed by joining a first semiconductor layer and a second semiconductor layer together, wherein the first semiconductor layer is an oxide semiconductor layer formed of a copper oxide, and the second semiconductor layer is an oxide semiconductor layer formed of a rare earth iron oxide. The first semiconductor layer and second semiconductor layer are formed through : a film-forming step of forming a film by making the rare earth iron oxide made powdery adhere to the surface of a conductive layer formed of copper or copper alloy; and a heat treatment step of forming the second semiconductor layer of the film through a heat treatment and also forming the first semiconductor layer between the conductive layer and second semiconductor layer.
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