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A method and a system for manufacturing a thin film transistor and polisilicon evaluation method 发明授权

2023-04-30 2800 412K 0

专利信息

申请日期 2025-06-24 申请号 JP2001012105
公开(公告)号 JP4770027B2 公开(公告)日 2011-09-07
公开国别 JP 申请人省市代码 全国
申请人 Sony Corporation2185
简介 PROBLEM TO BE SOLVED : To obtain an evaluation result without fail when evaluating a crystal condition of a polysilicon film formed by a low temperature polycrystallizing process. SOLUTION : Linearity or periodicity appear in a spatial structure on a film surface of the polysilicon film, which has been formed according to an energy density applied to amorphous silicon, during the low temperature polycrystallizing process by excimer laser. A surface image of the polysilicon film is photographed by ultraviolet light, and the periodicity of the film surface is digitized (transformed into AC values) from the image utilizing an autocorrelation function. The film condition is evaluated based on the AC value to set an excimer laser power. In the present invention, the surface of the amorphous silicon film is oxidized after the substrate has been cleaned by rare HF and before a laser anneal processing, and a natural oxide film is formed.


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