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Electronic device and production method thereof 发明授权

2023-08-11 4430 1356K 0

专利信息

申请日期 2025-08-18 申请号 US11922697
公开(公告)号 US8014126B2 公开(公告)日 2011-09-06
公开国别 US 申请人省市代码 全国
申请人 Shigeki Sato; Keiichi Fukuda
简介 Electronic device 1 comprises an element body 10, comprising a dielectric layer 2 constituted by a dielectric ceramic composition, and a terminal electrode 4, formed outside of the element body 10. The dielectric ceramic composition comprised a main component including barium titanate; a first subcomponent including at least one oxide of Mg and Ca; a second subcomponent including SiO2; a third subcomponent including at least one oxide of Mn and Cr; and a fourth subcomponent including an oxide of rare earth elements, wherein the net valence of Mn and/or Cr in the third subcomponent is 2.2 to 2.4. According to the electronic device 1, both high temperature accelerated lifetime characteristics and capacity stress aging characteristics can be improved in a balanced manner.


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