| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a magnetoresistance effect element having an improved MR change rate, and to provide a magnetoresistance effect element, a magnetic head assembly, and a magnetic recording and reproducing device.
SOLUTION : The manufacturing method provides for a magnetoresistance effect element which includes a first magnetic layer containing a ferromagnetic material, a second magnetic layer containing a ferromagnetic material, and an intermediate layer 16 provided between the first and second magnetic layers and including an insulating layer 161 and a conductive layer 162 penetrating through the insulating layer. The manufacturing method includes a step of forming a structure 16p including the insulating layer and the conductive layer penetrating through the insulating layer (step S110), a first treatment step of subjecting the structure to radiation of at least any one of ions or plasmas containing rare gas (step S120), and a second treatment step of subjecting the after the first structure treatment to any one of treatments, such as exposure to at least one of oxygen gas and nitrogen gas, ion beam radiation, and plasma radiation (step S130).
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