| 简介 |
Provided is a technology capable of suppressing splashes even during fast film deposition by satisfying a requirement (1) R is more than or equal to 0.35 and less than or equal to 0.80 and a requirement (2) Ra, Rb, and Rc are within a range of Rave ± 20% when crystallographic orientations , , , , and in directions normal to sputtering surfaces at a surface portion, a (1/4 × t) portion, and a (1/2 × t) portion of a sputtering target composed of an aluminum-base alloy containing nickel and rare earth elements are observed using electron backscatter diffraction patterns, where t is the thickness of the sputtering target composed of the aluminum-base alloy; R is a total area ratio of ± 15°, ± 15°, and ± 15°; Ra, Rb, and Rc are the total area ratios R at the surface portion, the (1/4 × t) portion, and the (1/2 × t) portion, respectively; and Rave is the average of R, i.e., Rave = (Ra + Rb + Rc)/3. |
客服热线：
手机版
二维码
