| 简介 |
PROBLEM TO BE SOLVED : To provide a light emitting device with strong emission intensity and a narrow half-value width of light emission wavelength by providing a quantum well and rare earth element ions in a light emitting layer. SOLUTION : The light emitting device 1 includes the light emitting layer mainly comprising silicon and containing rare earth elements. The light emitting layer contains the rare earth elements, and also includes a quantum well structure made of a porous semiconductor 12 and a semiconductor well structure 15 formed in a small pore 13 of the porous semiconductor 12. COPYRIGHT : (C)2006, JPO&NCIPI |
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