| 简介 |
PROBLEM TO BE SOLVED : To provide a thin-film forming apparatus capable of forming a thin film by independently controlling the refractive index of the thin film and the amount of rare-earth elements added to the thin film. SOLUTION : In the thin-film forming apparatus, a plasma generating chamber and a sputtering chamber are individually connected to a film-forming chamber at different positions from which a substrate surface fixed onto a substrate platform can be seen. The thin-film forming apparatus generates a plasma for the sputtering of the rare-earth elements added to the thin film, aside from a plasma used for forming the thin film. Thus, there is no interference between the two plasmas, and gas conditions of the plasma in the plasma generating chamber affecting the refractive index of the thin film and electric power for the sputtering can be independently controlled. Thus, the sputtering of the rare-earth elements and thin-film formation can be performed in parallel. COPYRIGHT : (C)2008, JPO&INPIT |
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