| 简介 |
PROBLEM TO BE SOLVED : To provide a memory element capable of recording information also with short width voltage pulse so that high operation speed is attained. SOLUTION : The memory element 10 comprises a memory layer 3 disposed between a first electrode 2 and a second electrode 6, and consisting of an oxide containing tantalum or silicon and a rare earth element; and an ion source layer 4 containing any element selected from Cu, Ag, and Zn and making contact with the memory layer 3. COPYRIGHT : (C)2007, JPO&INPIT |
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