| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device film forming method using neutral particles, which can suppress gas dissociation due to high-energy electrons or UV light and can form an excellent film having a planned molecular structure. ŽSOLUTION : The method includes steps of exciting a rare gas to generate plasma, imparting an electric field to the charged particles in the plasma to impart a predetermined energy, and neutralizing the charged particles to generate a neutral particle beam NB, irradiating the material gas with the neutral particle beam NB having a controlled energy, dissociating the predetermined molecules to dissociate, and forming a film 30 on a substrate 14. ŽCOPYRIGHT : (C)2010, JPO&INPIT Ž |
客服热线：
手机版
二维码
