| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a nitride-based compound semiconductor substrate, by which a nitride-based compound semiconductor layer free from a warp and having little variation in the off-angle in the plane is grown with satisfactory reproducibility, and to provide a nitride-based compound semiconductor self-standing substrate suitable for manufacturing a semiconductor device.SOLUTION : In the method for manufacturing a nitride-based compound semiconductor substrate, comprising epitaxially growing a nitride-based compound semiconductor layer on a substrate for growth, a rare earth perovskite substrate having a main plane, where the (011) plane is made to incline at an off angle of 0-2°(0° is excepted) in ≈[010] direction, is used as the substrate for growth.COPYRIGHT : (C)2011, JPO&INPIT |
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