| 简介 |
PROBLEM TO BE SOLVED : To provide a method for supplying gaseous hydrogen into a process chamber of a vapor deposition system which is capable of stably forming a vapor deposited metallic film on the surface of a material to be treated, such as a rare earth permanent magnet, by eliminating the adverse influence of the O2 existing in the process chamber even when long-time vapor deposition treatment is performed. SOLUTION : The vapor deposition treatment for depositing the vapor deposited metallic film containing the gaseous hydrogen on at least a portion in the process chamber of the vapor deposition system in the state of not housing the material to be treated in the process chamber is performed and thereafter the material to be treated is housed into the process chamber and the pressure in the process chamber is reduced, by which the gaseous hydrogen is released from the vapor deposited metallic film. |
客服热线：
手机版
二维码
