| 申请日期 | 2025-06-27 | 申请号 | JP2006067640 |
| 公开（公告）号 | JP4719035B2 | 公开（公告）日 | 2011-07-06 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Toshiba3078 | ||
| 简介 | A memory cell in a nonvolatile semiconductor memory device includes a tunneling insulating film, a floating gate electrode made of a Si containing conductive material, an inter-electrode insulating film made of rare-earth oxide, rare-earth nitride or rare-earth oxynitride, a control gate electrode, and a metal silicide film formed between the floating gate electrode and the inter-electrode insulating film. | ||
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