| 简介 |
PROBLEM TO BE SOLVED : To realize a further lower temperature process (600 deg.C or lower) by reducing the number of times of heat treating at a high temperature and to realize a simplification of steps and an improvement in a throughput. SOLUTION : A method for manufacturing a semiconductor device comprises the steps of forming an impurity region 18 in which a rare gas element (also called rare gas) is added by using a mask 17 for a semiconductor film having a crystal structure, gettering to segregate a metal element contained in the semiconductor film to the impurity region 18 by heat treating, and then forming a source region or a drain region of the impurity region 18. |
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