| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a semiconductor device which reduces degradation of Cu wiring life, and degradation of an insulating property of an insulating film.
SOLUTION : The method of manufacturing a semiconductor device includes : a step (S102) of forming, on a chamber inner surface, a multilayer film using a silicon (Si) film as a surface layer; and a step (S106) of performing a rare gas plasma treatment by arranging a substrate formed with copper (Cu) wiring and the insulating film on a surface thereof in a chamber formed with the multilayer film on the inner surface.
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