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MANUFACTURING METHOD OF LIGHT EMITTING DEVICE 发明申请

2023-12-10 4260 95K 0

专利信息

申请日期 2025-08-17 申请号 JP2010271088
公开(公告)号 JP2011124570A 公开(公告)日 2011-06-23
公开国别 JP 申请人省市代码 全国
申请人 SEMICONDUCTOR ENERGY LAB
简介 PROBLEM TO BE SOLVED : To provide a sputtering apparatus capable of depositing high-quality thin films containing no impurities, and a method of forming the high-quality thin films using the sputtering apparatus.SOLUTION : There is provided a method of manufacturing the light emitting device for depositing a semiconductor layer by using a the target material representative of a semiconductor material and the sputtering apparatus having parts covered with the thermal spraying material with the same material as the target material, and applying high-frequency power by using the target material in an atmosphere containing rare gases.COPYRIGHT : (C)2011, JPO&INPIT


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