| 申请日期 | 2025-06-26 | 申请号 | US12776414 |
| 公开（公告）号 | US20110147936A1 | 公开（公告）日 | 2011-06-23 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Jinn P Chu; Tung Yuan Yu; Chon Hsin Lin | ||
| 简介 | The present invention provides a semiconductor device, including a silicon-containing material, a conductive layer deposited on the silicon-containing material, and a diffusion barrier layer interposed between the silicon-containing material and the conductive layer, wherein the diffusion barrier layer contains a rare earth scandate. The present invention further provides a damascene structure containing the rare earth scandate as diffusion barrier. | ||
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