| 申请日期 | 2025-09-14 | 申请号 | US10548946 |
| 公开（公告）号 | US7927661B2 | 公开（公告）日 | 2011-04-19 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Anthony Copeland Jones | ||
| 简介 | Methods of depositing a single or mixed metal oxide layer or film are described herein. The methods use a rare earth metal precursor are described herein. The rare earth metal precursors have a general formula M[OCR1(R2)(CH2)X]3, wherein M is a rare earth metal, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR, wherein R is an alkyl group or a substituted alkyl group. | ||
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