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Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing t 发明授权

2023-03-09 1960 871K 0

专利信息

申请日期 2025-08-21 申请号 US12101348
公开(公告)号 US7927715B2 公开(公告)日 2011-04-19
公开国别 US 申请人省市代码 全国
申请人 Naoji Kashima; Shigeo Nagaya; Kunihiro Shima; Hirofumi Hoshino
简介 A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.


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