| 简介 |
The process produces a scintillation material of formula LnX3 or LnX3 : D, wherein Ln is at least one rare earth element, X is F, Cl, Br, or I; and D is at least one cationic dopant selected from the group consisting of Y, Zr, Pd, Hf and Bi. The at least one cationic dopant is present in the scintillation material in an amount of 10 ppm to 10, 000 ppm. The process includes optionally mixing the compound of the general empirical formula LnX3 with the at least one cationic dopant, heating the compound or the mixture obtained by the optional mixing to a melting temperature thereof, then growing the crystal or crystalline structure and cooling the resulting crystal or crystalline structure from a growing temperature to a temperature of 100° C. at a cooling rate of less than 20 K/h. |
客服热线：
手机版
二维码
