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Preparation of rare earth-aluminium-or-gallium garnet crystals from a fluoride-containing melt as we 发明申请

2023-01-03 2780 129K 0

专利信息

申请日期 2025-07-08 申请号 DE102009043003
公开(公告)号 DE102009043003A1 公开(公告)日 2011-04-07
公开国别 DE 申请人省市代码 全国
申请人 SCHOTT AG
简介 The process for growing a rare earth aluminum or gallium garnet crystal from a melt includes melting an aluminum or gallium garnet of at least one rare earth, preferably Lu or Y, or a mixture of oxides of formula Me2O3, wherein Me represents the rare earth or aluminum or gallium. The melt also includes a fluoride anion acting as a counter ion for the rare earth and the aluminum or gallium. The components comprising the rare earth and aluminum or gallium are introduced in the melt so that the amounts of the rare earth and aluminum or gallium are defined by the formula : SE(3-x)X(5-y)O(12-2x-2y)F(x+y), wherein 0≰x≰0.2 and 0≰y≰0.2 and 0


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