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PROCESS FOR GROWING RARE EARTH ALUMINUM OR GALLIUM GARNET CRYSTALS FROM A FLUORIDE-CONTAINING MELT A 发明申请

2023-02-20 3600 410K 0

专利信息

申请日期 2025-06-30 申请号 US12889506
公开(公告)号 US20110076217A1 公开(公告)日 2011-03-31
公开国别 US 申请人省市代码 全国
申请人 PARTHIER LUTZ; AICHELE TILO; WEHRHAN GUNTHER; SEITZ CHRISTOPH; VON SALDERN JOHANN CHRISTOPH
简介 The process for growing a rare earth aluminum or gallium garnet crystal from a melt includes melting an aluminum or gallium garnet of at least one rare earth, preferably Lu or Y, or a mixture of oxides of formula Me2O3, wherein Me represents the rare earth or aluminum or gallium. The melt also includes a fluoride anion acting as a counter ion for the rare earth and the aluminum or gallium. The components comprising the rare earth and aluminum or gallium are introduced in the melt so that the amounts of the rare earth and aluminum or gallium are defined by the formula : SE(3-x)X(5-y)O(12-2x-2y)F(x+y), wherein 0≦x≦0.2 and 0≦y≦0.2 and 0


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