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THIN FILM DEPOSITION METHOD AND THIN FILM DEPOSITION APPARATUS 发明申请

2023-10-08 3910 452K 0

专利信息

申请日期 2025-08-11 申请号 JP2009211078
公开(公告)号 JP2011058073A 公开(公告)日 2011-03-24
公开国别 JP 申请人省市代码 全国
申请人 ULVAC CORP
简介 PROBLEM TO BE SOLVED : To provide a thin film deposition method and a thin film deposition apparatus which improve the uniformity of the (001) orientation of an MgO film to be deposited using a sputtering process. SOLUTION : The thin film deposition method deposits the MgO film of the (001) orientation on an amorphous magnetic film by the following steps of : feeding a rare gas to the inside of a vacuum tank 11 which stores a disk-shaped substrate S having the amorphous magnetic film on the principal plane, while rotating the substrate S in the circumferential direction thereof in the vacuum tank 11; and sputtering an MgO target T with the rare gas, the MgO target T being arranged in such a form that a target surface Ta made of MgO is exposed to the inside of the vacuum tank 11 and the target surface Ta is tilted to the principal plane of the substrate 3. In the method, a plane including the principal plane of the substrate S is used as a projection plane, the target surface Ta is arranged in such a form that a projection region SP being a region where the target surface Ta is projected to normal direction thereof is separated from the principal plane of the substrate S, and also the angle between the normal with respect to the principal plane of the substrate S and the normal with respect to the target surface Ta is controlled to be 8° to 14°. COPYRIGHT : (C)2011, JPO&INPIT


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