| 申请日期 | 2025-08-16 | 申请号 | US12851427 |
| 公开（公告）号 | US20110062394A1 | 公开（公告）日 | 2011-03-17 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Raveen Kumaran; Thomas Tiedje; Scott Webster; Shawn Penson | ||
| 简介 | The present invention relates to the growth of single phase rare earth-doped sapphire (α-Al2O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters, neodymium-doped sapphire films, and methods for making and using thin films of this material. The rare earth-doped films of the present invention are especially useful in solid state lasers. | ||
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