| 简介 |
Disclosed is a method for operating a substrate processing apparatus, wherein generation of particles is suppressed by stably generating plasma. After disposing a substrate in a vacuum chamber having air released therefrom, a rare gas is supplied to the inside of the vacuum chamber, then, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Then, a reaction gas is brought into contact with the plasma of the rare gas by supplying the reaction gas to the inside of the vacuum chamber, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate, and the substrate is processed. The rare gas is brought into the plasma state first, not the reaction gas, by means of the plasma generating means, thereby stably generating the plasma, and suppressing generation of particles. |
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