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METHOD FOR FORMING THIN FILM AND DEVICE FOR FORMING THIN FILM 发明申请

2023-01-06 3420 1257K 0

专利信息

申请日期 2026-04-24 申请号 WOJP10065530
公开(公告)号 WO2011030826A1 公开(公告)日 2011-03-17
公开国别 WO 申请人省市代码 全国
申请人 ULVAC INC; ONO Kazunaga
简介 Within a vacuum vessel (11) in which a substrate (S) having a surface constituted of a noncrystalline magnetic film has been disposed, a target (T) having a surface (Ta) constituted of magnesium oxide is subjected to sputtering by means of a rare gas to form, on the noncrystalline magnetic film, a magnesium oxide film having a (001) orientation. This formation involves that in the noncrystalline magnetic film on which particles ejected from the target (T) have struck, an underlying magnesium oxide film is formed in a first pressure region where the noncrystallinity is maintained and that in the noncrystalline magnetic film on which particles ejected from the target (T) have struck, an overlying magnesium oxide film is formed on the underlying magnesium oxide film in a second pressure region where the noncrystallinity is not maintained.


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