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Method for producing a single crystal bismuth substd. rare earth iron garnet 发明授权

2023-04-24 2660 62K 0

专利信息

申请日期 2025-06-29 申请号 JP2005352852
公开(公告)号 JP4650943B2 公开(公告)日 2011-03-16
公开国别 JP 申请人省市代码 全国
申请人 Guranoputo Inc505418434
简介 PROBLEM TO BE SOLVED : To provide a technology for growing a bismuth-substituted rare earth iron garnet single crystal (BIG), by which the content of lead contained in the BIG can be reduced to 0.1 wt.% or less in a liquid phase epitaxial method (LPE method) using lead as a flux component. ŽSOLUTION : In the growth of the BIG by the LPE method using a melt comprising a rare earth oxide and the flux component containing the lead, the molar concentration x of lead oxide in the melt is set to be within a range of 5-48%, the molar concentration y of CaO is set to be within a range of 0.01-0.8%, and the melt composition is regulated to satisfy following condition : Log(x)>-44.53/y-0.857+Log(y). ŽCOPYRIGHT : (C)2007, JPO&INPIT Ž


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