| 简介 |
PROBLEM TO BE SOLVED : To provide an electronic element that uses a rare earth iron oxide and can be manufactured at lower temperature, and to provide a method of manufacturing the electronic element.
SOLUTION : This invention relates to the electronic element having a PN junction formed by joining a first semiconductor layer and a second semiconductor layer together, and the method of manufacturing the electronic element, wherein the first semiconductor layer is a polycrystalline semiconductor layer formed of the rare earth iron oxide, and the second semiconductor layer is an organic semiconductor layer formed of an organic material. Further, the first semiconductor layer is formed by blowing the rare earth iron oxide which is made powdery or applying a rare earth iron oxide solution prepared by mixing the rare earth iron oxide made powdery with a predetermined solution.
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