| 申请日期 | 2025-08-27 | 申请号 | WOCA10001220 |
| 公开（公告）号 | WO2011020175A1 | 公开（公告）日 | 2011-02-24 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | THE UNIVERSITY OF BRITISH COLUMBIA; KUMARAN Raveen; PENSON Shawn; TIEDJE Thomas; WEBSTER Scott E | ||
| 简介 | The present invention relates to the growth of single phase rare earth-doped sapphire (α- A12O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters, neodymium-doped sapphire films, and methods for making and using thin films of this material. The rare earth-doped films of the present invention are especially useful in solid state lasers. | ||
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