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Rare earth silicate and single crystal of rare earth silicate single crystal manufacturing method 发明授权

2023-07-23 4770 71K 0

专利信息

申请日期 2025-07-05 申请号 JP2004180161
公开(公告)号 JP4622329B2 公开(公告)日 2011-02-02
公开国别 JP 申请人省市代码 全国
申请人 Hitachi Chemical Co Ltd4455
简介 When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F 100 whose Miller indices can be determined by X-ray diffraction. The crystal face F 100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f 100 A and partial region surface f 100 B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles theta formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality : 0.1°


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