| 申请日期 | 2025-06-28 | 申请号 | JP2003318078 |
| 公开（公告）号 | JP4626133B2 | 公开（公告）日 | 2011-02-02 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | Shin Etsu Handotai Co Ltd190149 | ||
| 简介 | PROBLEM TO BE SOLVED : To provide a laminated wafer manufacturing method wherein the occurrence is prevented of bonding failures such as voids and blisters on the laminated surface due to ion implantation during the application of the ion implantation peeling method. ŽSOLUTION : In this laminated wafer manufacturing method, an Si1-XGeXlayer (0COPYRIGHT : (C)2005, JPO&NCIPI Ž | ||
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