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METHOD OF FORMING PRECURSOR SOLUTION FOR METAL ORGANIC DEPOSITION AND METHOD OF FORMING SUPERCONDUCT 发明申请

2023-06-19 4140 1857K 0

专利信息

申请日期 2025-07-11 申请号 US12506189
公开(公告)号 US20110015079A1 公开(公告)日 2011-01-20
公开国别 US 申请人省市代码 全国
申请人 Sang Im YOO; Seung Hyun Moon; Geo Myung Shin
简介 The present invention relates to a method of forming a precursor solution for metal organic deposition and a method of forming a superconducting thick film using the same. A first precursor comprising one rare earth element, a second precursor comprising barium, and a third precursor comprising copper are dissolved into acid to form a compound solution, the compound solution is dissolved into solvent to form a pre-precursor solution, and the solvent of the pre-precursor solution is evaporated to form a precursor solution with the increased viscosity. A sufficiently thick film can be formed without any cracking through only one-time coating.


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