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ORIENTED POLYCRYSTAL SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND OXIDE SUPERCONDUCTOR 发明申请

2023-10-29 4900 117K 0

专利信息

申请日期 2025-06-26 申请号 JP2009152568
公开(公告)号 JP2011006751A 公开(公告)日 2011-01-13
公开国别 JP 申请人省市代码 全国
申请人 FUJIKURA LTD
简介 PROBLEM TO BE SOLVED : To provide an oriented polycrystal substrate in which the warpage of a substrate caused by film internal stress is prevented by thin-filming an intermediate layer while maintaining its satisfactory crystal orientational properties, and which has excellent productivity as well, and to provide an oxide superconductor provided therewith. SOLUTION : On the surface of a metal substrate 11, there is formed an intermediate layer 15 comprising : a first layer 13 with a lock salt structure film-deposited so as to be oriented symmetrically for three times in the plane by an ion beam-assisted deposition method (IBAD method); an oriented regulation layer 12 film-deposited so as to be oriented symmetrically for three times on the first layer 13; and a second layer 14 with a fluorite structure or a rare earth C type structure according thereto or a pyrochlore structure film-deposited so as to be oriented symmetrically for four times in the plane on the oriented regulation layer 12 by the IBAD method. COPYRIGHT : (C)2011, JPO&INPIT


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