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Method of manufacturing nitride single crystal 发明授权

2023-01-09 4090 81K 0

专利信息

申请日期 2026-04-28 申请号 JP2004195665
公开(公告)号 JP4608970B2 公开(公告)日 2011-01-12
公开国别 JP 申请人省市代码 全国
申请人 Sumitomo2130
简介 PROBLEM TO BE SOLVED : To provide a large nitride single crystal and a method for producing the same. ?SOLUTION : The method for producing the nitride single crystal comprises forming a substance transport medium layer 12 containing a compound of a rare earth element on the surface of a nitride crystal 11 and growing the nitride single crystal 14 on a seed crystal 13 by bringing the seed crystal 13 into contact with the substance transport medium layer 12. In the method for producing the nitride single crystal, the substance transport medium layer 12 contains at least one kind selected from the group of aluminum compounds, alkaline earth metal compounds, and transition metal compounds, and one compound of rare earth elements. Thereby, the nitride single crystal having a crystal diameter of ≥10 mm can be obtained. ?COPYRIGHT : (C)2006, JPO&NCIPI ?


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