| 申请日期 | 2025-07-17 | 申请号 | US11608286 |
| 公开（公告）号 | US7867919B2 | 公开（公告）日 | 2011-01-11 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Kie Y Ahn; Leonard Forbes | ||
| 简介 | Lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor. | ||
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