| 简介 |
PROBLEM TO BE SOLVED : To improve performance of a CMISFET having a high dielectric constant gate insulating film and a metal gate electrode.
SOLUTION : An n-channel MISFET Qn has a gate electrode GE1 formed on a surface of a p-type well PW of a semiconductor substrate 1 across an Hf-containing insulating film 3a functioning as a gate insulating film; and a p-channel MISFET Qp has a gate electrode GE2 formed on a surface of an n-type well NW across an Hf-containing insulating film 3b functioning as a gate insulating film. The gate electrodes GE1 and GE2 each have a layered structure of a metal film 7 and a silicon film 8 thereupon. The Hf-containing insulating film 3a comprises : Hf, a rare-earth element, Si, O, and N; or Hf, a rare-earth element, Si, and O. The Hf-containing insulating film 3b comprises : Hf, Al, O, and N; or Hf, Al, and O.
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