| 申请日期 | 2025-06-25 | 申请号 | WOUS10039534 |
| 公开（公告）号 | WO2010151553A1 | 公开（公告）日 | 2010-12-29 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | SOLAR JUNCTION CORPORATION; WIEMER Michael W; YUEN Homan B; SABNIS Vijit A; SHELDON Michael J; FUSHMAN Ilya | ||
| 简介 | Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
